 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| New Product EDF1AS thru EDF1DS Vishay General Semiconductor Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers FEATURES * UL recognition, file number E54214 * Ideal for automated placement ~ ~ ~ * Ultrafast reverse recovery time for high frequency * High surge current capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFS Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body ~ Case Style DFS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr TJ max. 1A 50 V to 200 V 50 A 5 A 1.05 V 50 ns 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output rectified current at TA = 40 C (1) Peak forward surge current single half sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Note: (1) Pulse test: 300 ms pulse width, 1 % duty cycle SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t TJ, TSTG EDF1AS 50 35 50 EDF1BS 100 70 100 1.0 50 10 - 55 to + 150 EDF1CS 150 106 150 EDF1DS 200 140 200 UNIT V V V A A A2 s C Document Number: 88578 Revision: 30-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product EDF1AS thru EDF1DS Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Note: (1) Pulse test: 300 ms pulse width, 1 % duty cycle TEST CONDITIONS 1.0 A (1) TA = 25 C TA = 125 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL VF IR trr EDF1AS EDF1BS 1.05 5.0 1.0 50 EDF1CS EDF1DS UNIT V A mA ns THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas SYMBOL RJA RJL EDF1AS EDF1BS 38 12 EDF1CS EDF1DS UNIT C/W ORDERING INFORMATION (Example) PREFERRED P/N EDF1DS-E3/45 EDF1DS-E3/77 UNIT WEIGHT (g) 0.406 0.406 PREFERRED PACKAGE CODE 45 77 BASE QUANTITY 50 1500 DELIVERY MODE Tube 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.0 60 Average Forward Output Current (A) Peak Forward Surge Current (A) IPK/IAV = Resistive or Inductive Load 0.75 0.51 x 0.51" (13 x 13 mm) Copper Pads 0.5 Capacitive Loads 5.0 Ipk = 10 IAV 20 TJ = 150 C Single Sine-Wave 50 40 30 20 0.25 10 1.0 Cycle 0 20 40 60 80 100 120 140 160 0 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Figure 1. Derating Curves Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88578 Revision: 30-Jan-08 New Product EDF1AS thru EDF1DS Vishay General Semiconductor 10 30 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) Junction Capacitance (pF) 1.4 25 1 20 15 0.1 TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.01 0.4 10 5 0 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1000 Instantaneous Reverse Leakage Current (A) 100 TJ = 125 C 10 1 TJ = 25 C 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS 0.205 (5.2) 0.195 (5.0) Mounting Pad La yout 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45 0.404 MAX. (10.26 MAX.) 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.013 (0.330) 0.003 (0.076) Document Number: 88578 Revision: 30-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of EDF1DS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |